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| FDY300NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET January 2007 Januar 2007 y FDY300NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. tm Features * 600 mA, 20 V RDS(ON) = 700 m @ VGS = 4.5 V RDS(ON) = 850 m @ VGS = 2.5 V * ESD protection diode (note 3) * RoHS Compliant Applications * Li-Ion Battery Pack 1 S G1 G S 2 3 D D Absolute Maximum Ratings Symbol VDSS VGSS TA=25 C unless otherwise noted o Parameter Drain-Source Voltage Gate-Source Voltage Ratings 20 (Note 1a) 1a) Unit s V V ID PD Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1 TJ, TSTG Operating and Storage Junction Temperature Range 12 600 1000 625 446 -55 to +150 mA mW C Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) (Note 1b) 1 200 280 C/W Package Marking and Ordering Information Device Marking C Device FDY300NZ Reel Size 7 '' Tape width 8 mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics BVDSS TJ IDSS IGSS ID = 250 A, Referenced to 25C 15 mV/C VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 4.5 V, VDS = 0 V 1 10 1 A A A On Characteristics VGS(th) VGS(th) TJ RDS(on) (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C 0.6 1.0 3 1.3 V mV/C gFS Forward Transconductance VGS = 4.5 V, ID = 600 mA VGS = 2.5 V, ID = 500 mA ID = 150 mA VGS = 1.8 V, VGS = 4.5 V, ID=600mA, TJ = 125C VDS = 5 V, ID = 600 mA 0.24 0.36 0.70 0.35 1.8 0.70 0.85 1.25 1.00 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 10 V, f = 1.0 MHz V GS = 0 V, 60 pF 20 pF Crss Reverse Transfer Capacitance (Note 2) 10 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 6 12 ns 8 16 ns td(off) Turn-Off Delay Time 8 16 ns tf Turn-Off Fall Time 2.4 4.8 ns Qg Total Gate Charge Qgs Gate-Source Charge VDS = 10 V, VGS = 4.5 V ID = 600 mA, 0.8 1.1 nC 0.16 nC Qgd Gate-Drain Charge 0.26 nC Drain-Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 150 mA (Note 2) 0.7 1.2 V IF = 600 mA, dIF/dt = 100 A/s 8 1 nS nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 200C/W when mounted on a 1in2 pad of 2 oz copper b) 280C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics 1 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V ID, DRAIN CURRENT (A) 0.8 2.6 3.0V 2.5V 2.4 2.2 2 1.8 1.6 VGS = 2.0V 2.0V 0.6 0.4 2.5V 1.4 1.2 1 0.8 3.0V 3.5V 0.2 4.5V 0 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.9 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 600mA VGS = 4.5V 1.4 ID = 300mA 0.8 0.7 0.6 TA = 125oC 1.2 1 0.5 0.4 0.3 0.2 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 1.5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 1.2 TA = -55 C o 25oC VGS = 0V 0.1 125oC 0.9 TA = 125oC 0.01 25oC 0.6 -55oC 0.001 0.3 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics 5 100 ID = 600mA VGS, GATE-SOURCE VOLTAGE (V) 90 80 CAPACITANCE (pF) f = 1MHz VGS = 0 V Ciss 4 VDS = 5V 10V 3 70 60 50 40 30 20 10 15V 2 Coss 1 Crss 0 4 8 12 16 20 0 0 0.2 0.4 0.6 0.8 1 Qg, GATE CHARGE (nC) 0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 30 25 20 15 10 5 0 0.0001 ID, DRAIN CURRENT (A) SINGLE PULSE RJA = 280 C/W C TA = 25 1 RDS(ON) LIMIT 1ms 10ms 100ms 10s 1s 0.1 DC VGS = 4.5V SINGLE PULSE RJA = 280oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA =280 C/W 0.1 P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY300NZ Rev B www.fairchildsemi.com FDY300NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 1.70 1.50 0.50 0.35 0.25 0.50 3 0.98 0.78 1.70 1.50 1.14 1.80 1 (0.15) 2 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 SEE DETAIL A 0.20 0.04 0.43 0.28 0.54 0.34 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY300NZ Rev B www.fairchildsemi.com TRADEMARKS The following are registered and unregistered tradem ark s F airc hild S em ic onduc tor owns or is authoriz ed to use and is not intended to b e an ex haustiv e list of all suc h tradem ark s. F A C T Q uiet S eriesTM G lob alO p toisolatorTM G TO TM H iS eC TM I2 C TM i-Lo TM Im p liedD isc onnec tTM IntelliM A X TM IS O P L A N A R TM L ittleF ETTM M IC R O C O U P L ER TM M ic roF ETTM M ic roP ak TM M IC R O W IR ETM M SXTM M S X P roTM A c ross the b oard. A round the world.TM The P ower F ranc hise(R) P rogram m ab le A c tiv e D roop TM A C Ex TM A c tiv eA rray TM B ottom lessTM B uild it N owTM C oolF ETTM CROSSVOLTTM D O M ETM Ec oS P A R K TM E2 C M O S TM EnS ignaTM F A C T(R) F A S T(R) F A S TrTM FPSTM F R F ETTM O CXTM O C X P roTM O P TO L O G IC (R) O P TO P L A N A R TM PACM ANTM PO PTM P ower24 7 TM P owerEdgeTM P owerS av erTM P owerTrenc h(R) Q F ET(R) Q STM Q T O p toelec tronic sTM Q uiet S eriesTM R ap idC onfigureTM R ap idC onnec tTM S erD esTM S c alarP um p TM S IL EN T S W ITC H ER S M A R T S TA R TTM SPM TM S tealthTM S up erF ETTM S up erS O TTM-3 S up erS O TTM-6 S up erS O TTM-8 S y nc F ETTM TC M TM Tiny B oostTM Tiny B uc k TM Tiny P W M TM Tiny P owerTM Tiny L ogic (R) TIN Y O P TO TM TruTranslationTM UHC(R) (R) U niF ETTM VCXTM W ireTM DISC L AIMER F A IR C H IL D S EM IC O N D U C TO R R ES ER V ES TH E R IG H T TO M A K E C H A N G ES W ITH O U T F U R TH ER N O TIC E TO A N Y P R O D U C TS H ER EIN TO IM P R O V E R EL IA B IL ITY , F U N C TIO N O R D ES IG N . F A IR C H IL D D O ES N O T A S S U M E A N Y L IA B IL ITY A R IS IN G O U T O F TH E A P P L IC A TIO N O R U S E O F A N Y P R O D U C T O R C IR C U IT D ES C R IB ED H ER EIN ; N EITH ER D O ES IT C O N V EY A N Y L IC EN S E U N D ER ITS P A TEN T R IG H TS , N O R TH E R IG H TS O F O TH ER S . TH ES E S P EC IF IC A TIO N S D O N O T EX P A N D TH E TER M S O F F A IR C H IL D 'S W O R L D W ID E TER M S A N D C O N D ITIO N S , S P EC IF IC A L L Y TH E W A R R A N TY TH ER EIN , W H IC H C O V ER S TH ES E P R O D U C TS . L IF E SU P P O RT P O L IC Y F A IR C H IL D 'S P R O D U C TS A R E N O T A U TH O R IZ ED F O R U S E A S C R ITIC A L C O M P O N EN TS IN L IF E S U P P O R T D EV IC ES O R S Y S TEM S W ITH O U T TH E EX P R ES S W R ITTEN A P P R O V A L O F F A IR C H IL D S EM IC O N D U C TO R C O R P O R A TIO N . A s used herein: 1 . L ife sup p ort dev ic es or sy stem s are dev ic es or sy stem s whic h, (a) are intended for surgic al im p lant into the b ody , or (b ) sup p ort or sustain life, or (c ) whose failure to p erform when p rop erly used in ac c ordanc e with instruc tions for use p rov ided in the lab eling, c an b e reasonab ly ex p ec ted to result in signific ant injury to the user. P RO DU C T STATU S DEF IN ITIO N S De fin itio n o f Te rm s 2. A c ritic al c om p onent is any c om p onent of a life sup p ort dev ic e or sy stem whose failure to p erform c an b e reasonab ly ex p ec ted to c ause the failure of the life sup p ort dev ic e or sy stem , or to affec t its safety or effec tiv eness. Da ta s h e e t Id e n tific a tio n A dv anc e Inform ation P ro d u c t Sta tu s F orm ativ e or In D esign F irst P roduc tion De fin itio n This datasheet c ontains the design sp ec ific ations for p roduc t dev elop m ent. S p ec ific ations m ay c hange in any m anner without notic e. This datasheet c ontains p relim inary data, and sup p lem entary data will b e p ub lished at a later date. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. This datasheet c ontains final sp ec ific ations. F airc hild S em ic onduc tor reserv es the right to m ak e c hanges at any tim e without notic e in order to im p rov e design. This datasheet c ontains sp ec ific ations on a p roduc t that has b een disc ontinued b y F airc hild sem ic onduc tor. The datasheet is p rinted for referenc e inform ation only . R ev . I22 P relim inary N o Identific ation N eeded F ull P roduc tion O b solete N ot In P roduc tion |
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